| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0603
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66325
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-13055
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-49113
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7398
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7393
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7428
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-16 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-861
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-62
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0727
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8083
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-36 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-74
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-62 |
| filingDate |
2018-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2021-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2021-11-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-108630665-B |
| titleOfInvention |
Power semiconductor device |
| abstract |
The invention discloses a power semiconductor device. A power semiconductor device includes a semiconductor body coupled to a first load terminal and a second load terminal. The semiconductor body includes: a first doped region of a second conductivity type electrically connected to the first load terminal; an emitter region of the second conductivity type electrically connected to a second load terminal; a drift region having the first conductivity type and arranged between the first doped region and the emitter region. The drift region and the first doped region enable the power semiconductor device to operate in: a conducting state during which a load current between load terminals is conducted in a forward direction; a forward blocking state during which a forward voltage applied between terminals is blocked; and a reverse blocking state during which a reverse voltage applied between the terminals is blocked. The semiconductor body further includes a recombination region disposed at least within the first doped region. |
| priorityDate |
2017-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |