http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108615681-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32139 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32135 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 2018-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108615681-B |
| titleOfInvention | Etching method |
| abstract | The invention discloses an etching method, which comprises the following steps: a, forming a material layer, a sacrificial layer and a hard mask layer on a substrate in sequence; b, etching the hard mask layer by taking the photoresist pattern as a mask to form a hard mask pattern; step c, taking the hard mask pattern as a mask, etching part of the sacrificial layer, wherein the rest sacrificial layer is provided with a horizontal part and a vertical part on the horizontal part; d, decomposing the hard mask pattern to form a protective layer on the side wall of the vertical part of the sacrificial layer; and e, repeating the steps c and d until the material layer is exposed and a vertical sacrificial layer pattern is left. According to the etching method, the hard mask layer pattern is physically bombarded to be decomposed and attached to the side wall of the sacrificial layer to serve as the protective layer, so that the sacrificial layer pattern with good verticality is obtained, the etching fineness is improved, the device defects are reduced, and the yield is improved. |
| priorityDate | 2018-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.