http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108598261-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-60 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L28-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L49-02 |
| filingDate | 2018-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108598261-B |
| titleOfInvention | Method for preparing single crystal capacitor by using polycrystalline material |
| abstract | The invention provides a method for preparing a single crystal capacitor by using a polycrystalline material, which comprises the following steps: (1) preparing a test electrode of the capacitor on the substrate; (2) calibrating and selecting single crystal particles in the polycrystalline material by utilizing electron beam back scattering diffraction of a focused ion beam-electron beam double-beam system; (3) etching two parallel grooves on the single crystal particles by using a focused ion beam of a focused ion beam-electron beam dual-beam system, depositing an electric insulation protective layer in the grooves, and extracting the single crystal particles with the electric insulation protective layer; (4) etching the single crystal grains to a target thickness from one side or opposite sides of the single crystal grains except for having the electrically insulating protective layer; (5) performing steps (a) and (b) in any order, thereby producing a capacitor: (a) forming capacitance electrodes on both sides of the single crystal grains except for having the electrically insulating protective layer; (b) etching to remove the redundant part on the upper part of the single crystal particles; (6) the capacitive electrode is connected to the test electrode. |
| priorityDate | 2018-05-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 65.