| abstract |
This application provides a kind of semiconductor device and a kind of methods of manufacture semiconductor device.The semiconductor device includes：Gate insulation layer on substrate, the first work function adjustment layer on gate insulation layer, the lower blocking conductive layer contacted in the first work function adjustment layer and with the first work function adjustment layer and it is lower blocking conductive layer on and with it is lower blocking conductive layer contact upper blocking conductive layer.Upper blocking conductive layer and the lower material for stopping conductive layer and including common, for example, they can include respectively titanium nitride (TiN) layer. |