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filingDate 2018-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_33c940cbe3b9da70a882178bfdf3e1d0
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publicationDate 2018-09-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-108560044-A
titleOfInvention Double-layer crucible for CsB4O6F crystal growth and CsB4O6F crystal growth method
abstract A double-layer crucible: the inner layer of the crucible with a crystal elimination structure at the bottom is placed in the outer layer of the crucible; the outer layer head is located at the top of the outer layer; the head is provided with a straight pipe connected to the exhaust system; the straight pipe is connected to the outer layer of the crucible The layer and the inner layer are connected; the head is fused with the top of the outer layer of the crucible so that the outer layer of the crucible completely covers the inner layer of the crucible; the cesium fluoroborate crystal growth steps: put the crystal growth raw materials in the inner layer; put the inner layer in the outer layer In the middle; seal the head and the outer layer of the crucible; evacuate through the straight tube, and seal the straight tube under vacuum; or fill the outer and inner layers of the crucible with inert gas through the straight tube after vacuuming, Under the atmosphere, the outer straight tube is melt-sealed so that the outer layer of the crucible is completely sealed to contain the inner layer of the crucible; the double-layer crucible after melting is placed in a crucible descending growth furnace, and cesium fluoroborate crystals are grown by the crucible descending method; The double-layer crucible combines the advantages of quartz crucibles, inert metals and carbon-based crucibles and overcomes their disadvantages, so that it can be efficiently used for cesium fluoroborate crystal growth.
priorityDate 2018-06-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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