http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108529690-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_5139ac25b1cee8d91a47e2057f67ba0d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G53-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G53-04 |
| filingDate | 2018-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b8e0fd25668b8b00fd8ad01fe4f0960a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3d18946335b66997f33186c5c0544989 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5bb2cd71b05b04b0b69941532b57adba |
| publicationDate | 2018-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108529690-A |
| titleOfInvention | A kind of preparation method and application of nickel oxide nanocrystal |
| abstract | The invention relates to a method for preparing nickel oxide nanocrystals, comprising: mixing a nickel salt solution with an alkaline solution to obtain a nickel hydroxide precipitate; after centrifugally purifying the nickel hydroxide precipitate, dispersing it in a solvent for reflux, and centrifugally purify the reflux product to obtain a nickel oxide nanocrystal precipitate; disperse the nickel oxide nanocrystal precipitate in a polar solvent to obtain a nickel oxide nanocrystal dispersion. Nickel oxide nanocrystals with a single phase, small particle size and uniform size distribution can be obtained through the present invention; and the use of high-temperature tube furnaces and expensive organic solvents is avoided in the preparation process, and no inert gas protection is required, which greatly reduces the Production cost; In addition, the solvent used to disperse nickel oxide in the present invention is a polar solvent, which can be distinguished from the solvent used in the upper and lower layers of the optoelectronic device, and is easy to remove, and will not affect the growth of the upper and lower layers of the device. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2023062672-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/US-11532800-B2 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114405304-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-114405304-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110061140-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112186107-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112186107-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109200965-A |
| priorityDate | 2018-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 96.