http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108511616-A

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filingDate 2018-04-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecd191536c91d553b79e45dd0e3f5bdc
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publicationDate 2018-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-108511616-A
titleOfInvention A kind of preparation method of perovskite film layer and perovskite light-emitting diode device
abstract The invention discloses a method for preparing a perovskite film layer and a perovskite light-emitting diode device, which comprises the following steps: 1) drying a transparent conductive glass substrate after standardized cleaning; 2) placing the substrate in ultraviolet ozone Irradiate under the lamp for 10 minutes, and then spin-coat the hole transport material on the transparent conductive glass to form a hole transport layer; 3) spin-coat the perovskite precursor solution by using multiple spin coating methods, and spin-coat the hole transport layer to form perovskite 4) Vacuum-evaporating electron transport materials on the perovskite luminescent layer to form an electron transport layer; 5) Vacuum-evaporating electron injection materials and metals on the electron transport layer in sequence to form an electron injection layer and a cathode layer, Obtain a perovskite light-emitting diode device; 6) package the light-emitting device in a glove box with an inert gas atmosphere. The multiple spin coating method provided by the invention can inhibit the crystallization of the perovskite, make the perovskite film more dense and uniform, have a large coverage, enhance PL, and help improve the performance of the light emitting diode device.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109638116-B
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