http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108479806-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-10 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-362 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J35-0033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J35-065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-581 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022425 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M10-0525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J27-0573 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B01J35-004 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M4-36 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M4-48 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M4-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J35-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M10-0525 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01J27-057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 |
| filingDate | 2018-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108479806-B |
| titleOfInvention | Heterojunction film composed of same metal and oxygen group element, preparation and application thereof |
| abstract | The invention relates to a preparation method of a heterojunction film composed of homogeneous metal and oxygen group elements, metal salt, acid and water are mixed to obtain metal precursor solution; depositing the metal precursor solution on the surface of the substrate at the pH of 2-11 and the temperature of 30-90 ℃ to form a metal oxide; carrying out heat treatment on at least one of a metal oxide, a sulfur source and a selenium source at the temperature of 100-600 ℃ and the air pressure of-0.05-1 MPa for 2-120 min to obtain the heterojunction film; the heterojunction film is a metal oxide-sulfide heterojunction film, a metal oxide-selenide heterojunction film or a metal oxide-sulfide-selenide heterojunction film. The invention also discloses the heterojunction film prepared by the method and application thereof. The method has the advantages of simple equipment, low price, easy large-area continuous production and the like, and the prepared film has controllable thickness components, compact and uniform appearance and good crystallization performance and photoelectric performance. |
| priorityDate | 2018-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 79.