http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108455577-A

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B32-184
filingDate 2018-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5c5f6706e5336c64d7f075a1ca348e27
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eeb62e372bad20adba92f817cc544f82
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publicationDate 2018-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-108455577-A
titleOfInvention A kind of method of low liquid level tension wet method transfer graphene
abstract The invention discloses a kind of methods that low liquid level tension wet method shifts graphene, including have the copper foil of graphene to clean growth and dry up;Etchant solution is configured, etchant solution is added in container, so that the liquid level of etchant solution is generated protrusion, forms meniscus;Heptane is added dropwise on graphene copper foil, graphene surface is completely covered in heptane;Graphene copper foil with heptane layer is swum on the meniscus of etchant solution, copper foil is located at etchant solution on liquid level, and graphene is located on copper foil;Heptane is added dropwise in etchant solution;It waits for copper foil dissolving to finish, the oxide layer of substrate is flatly placed in above graphene;Substrate is slowly pressed into graphene, until graphene and substrate come into full contact with, graphene is attached to substrate, forms graphene-based bottom;It obtains graphene-based bottom and cleans;It is dry to obtain clean graphene-based bottom.The present invention can completely shift graphene and not introduce impurity.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113184835-B
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priorityDate 2018-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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