http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108441841-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-305 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-30 |
| filingDate | 2018-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-06-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108441841-B |
| titleOfInvention | Method for growing transition metal disulfide film |
| abstract | The invention discloses a method for growing a transition metal disulfide film, which adopts a metal amidinate compound as a metal precursor, H 2 S plasma is used as a sulfur source to synthesize pyrite FeS by an ALD process 2 ，CoS 2 And NiS 2 A film. The FeS of the invention 2 ，CoS 2 And NiS 2 The deposition process follows the ideal growth behavior of layer-by-layer ALD in a wide deposition temperature range, and can obtain a transition metal disulfide film with a pyrite structure with very pure components and smooth surface. Further, the ALD process of the present invention deposits FeS 2 ，CoS 2 And NiS 2 The thin film can be conformally deposited at aspect ratios as high as 10: 1, thereby representing the broad and promising applicability of this ALD process for conformal thin film deposition on complex high aspect ratio 3D architectures. |
| priorityDate | 2018-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.