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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-60
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-56
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filingDate 2018-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-08-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-108428794-B
titleOfInvention Method and application of non-destructively transferring and patterning graphene using photoresist support layer
abstract The invention discloses a method and application for nondestructively transferring and patterning graphene by using a photoresist support layer, and belongs to the technical field of organic light emitting diodes. Using photoresist as a support layer to coat the surface of graphene can solve the two problems of non-destructive transfer and patterning of graphene. Due to the moderate size interaction between the photoresist and the graphene surface, the graphene can be completely lifted and transferred to the substrate to be processed without damage; at the same time, the photoresist layer can be directly used for photolithographic patterning of graphene , and finally obtain precisely patterned large-area graphene with a clean and flat surface. For the graphene to be patterned to be introduced into the photoresist support layer, a dual-purpose layer can be realized, that is, the photoresist support layer can not only help transfer graphene, but also be directly used for subsequent photolithographic patterning. Patterning graphene by direct exposure of the photoresist support layer can also achieve higher resolution, which is of great significance for the development of graphene touch screens.
priorityDate 2018-01-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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