http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108417739-A

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filingDate 2018-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9c213fee1aac14e87a710b30095082c
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publicationDate 2018-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-108417739-A
titleOfInvention A kind of perovskite light-emitting diode based on spraying process and its preparation method
abstract The invention discloses a method for preparing a perovskite light-emitting diode based on a spraying process. The method comprises the following steps: preparing a substrate for a substrate, and sequentially preparing an anode layer, a hole transport layer, and a perovskite light-emitting layer on the substrate , the electron transport layer and the cathode layer, and finally the obtained substrate is packaged to complete the device preparation, wherein the step of preparing the perovskite light-emitting layer is specifically to place the substrate on a low-temperature plate to cool down, and spray on the hole transport layer Spray the perovskite material solution at one time to obtain the perovskite light-emitting layer, and then place the low-temperature substrate directly on the hot stage for annealing to complete the preparation of the perovskite light-emitting layer. The invention adopts low-temperature one-time spraying to prepare the perovskite light-emitting layer thin film, has low roughness, good crystallinity and small crystal grains, and can improve the brightness and quantum efficiency of the light-emitting diode.
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priorityDate 2018-05-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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