http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108400237-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-801 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate | 2017-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108400237-B |
| titleOfInvention | Conductive bridge random access memory and method of making the same |
| abstract | The present invention provides a conductive bridge random access memory and a manufacturing method thereof. The conductive bridge random access memory comprises a bottom electrode layer formed on a semiconductor substrate; a resistance transition layer formed on the bottom electrode layer; an electron capture layer formed on the resistance transition layer; a barrier layer formed on the electron on the trapping layer; an ion source layer formed on the barrier layer; and a top electrode layer formed on the ion source layer. The above-mentioned electron capture layer includes an electron capture material, and the electron affinity of the electron capture material is at least 60 KJ/mole. The present invention can improve the stability and durability of the device during high temperature operation by adding a double-layer structure with an electron capture layer and a barrier layer between the resistance transition layer and the ion source layer. |
| priorityDate | 2017-02-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 48.