http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108352417-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022441 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1884 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022466 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0747 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022475 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02363 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-288 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0224 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0747 |
| filingDate | 2016-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108352417-B |
| titleOfInvention | Method for manufacturing crystalline silicon solar cell and method for manufacturing crystalline silicon solar cell module |
| abstract | The solar cell is provided with a first intrinsic silicon thin film (2), a p-type silicon thin film (3), a first transparent electrode layer (4), and a pattern collector (11) on a first main surface (51) of an n-type crystalline silicon substrate (1), and is provided with a second intrinsic silicon thin film (7), an n-type silicon thin film (8), a second transparent electrode layer (9), and a plated metal electrode (21) on a second main surface (52) of the n-type crystalline silicon substrate. An insulating region (41) is provided on the periphery of the first main surface of the n-type crystalline silicon substrate, excluding the short circuit between the first transparent electrode layer and the second transparent electrode layer. In the manufacturing method of the present invention, the second intrinsic silicon-based thin film is formed after the first intrinsic silicon-based thin film is formed. The plated metal electrode is formed by electroplating in a state where an insulating region is provided on the periphery of the first main surface of the n-type crystalline silicon substrate. Thickness d of pattern collector 1 Greater than the film thickness d of the plated metal electrode 2 。 |
| priorityDate | 2015-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.