| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0016
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2933-0025 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-005
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02322
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45525
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0694
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-58
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-062
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-072
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45527
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-0036 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-15
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0256 |
| filingDate |
2016-10-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2023-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2023-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-108352397-B |
| titleOfInvention |
Photosensitive devices and materials |
| abstract |
Disclosed herein are deposition methods for depositing thin films comprising a dielectric transition metal compound phase and a conductive or semiconductive transition metal compound phase on a substrate in a reaction space. The deposition method may contain multiple supercycles. Each supercycle may contain a dielectric transition metal compound subcycle and a reducing atom cycle. The dielectric transition metal compound subcycle may include contacting the substrate with a dielectric transition metal compound. The reducing atom cycle may comprise contacting the substrate alternately and sequentially with a reducing agent and a nitrogen reactant. The film may comprise a dielectric transition metal compound phase embedded in a conductive or semiconducting transition metal compound phase. |
| priorityDate |
2015-10-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |