| abstract |
The invention discloses a method for growing a polycrystalline perovskite thin film by nucleation of perovskite quantum dots and a related optoelectronic device. The perovskite quantum dot anti-solvent containing a certain concentration is introduced into the precursor solution of the perovskite film, and after being treated at a certain temperature, the polycrystalline perovskite film is grown by quantum dot-induced nucleation. The perovskite film is used as a light absorption layer (or carrier recombination) layer, adopts a p-i-n or n-i-p structure, and introduces an electron transport (or injection) layer and a hole transport (or injection) layer And electrodes, etc., to prepare perovskite solar cells (or perovskite light-emitting diodes). The method of the invention is simple, the process compatibility is good, and the crystal quality of the perovskite thin film is significantly improved, and the photoelectric conversion efficiency of the solar cell and the luminous efficiency of the light emitting diode device are improved. |