| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_89f3efb8583f1229b9a555a3776c89ba |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-026
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-8833
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-245 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate |
2018-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6777efaee446220b571dcc39db2ec3ef
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ed556da5a7908b9ff00dc0677302a03b
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3e1baae8420c1dea88b654365c5c276d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1d7074dc38192c78feb95ad59d549635
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_080683382f925a6a187dc73d65b3f100
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_956b1553349ad3d607e0ce9438700f00 |
| publicationDate |
2018-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-108321294-A |
| titleOfInvention |
A thin film resistive memory with adjustable storage mechanism and its preparation method |
| abstract |
The invention discloses a thin-film resistive memory with adjustable storage mechanism and a preparation method thereof. The substrate is a silicon-based substrate covered with an insulating layer on the upper surface, and quasi-one-dimensional nanostructures of potassium copper sulfate are dispersed on the insulating layer. A first metal film electrode in ohmic contact is deposited on one end of the quasi-one-dimensional nanostructure of copper sulfate potassium, and a copper oxide film formed by spontaneous oxidation and a second metal film electrode are deposited sequentially from bottom to top on the other end. The invention uses high-purity metal copper as an evaporation source, realizes the preparation of oxide thin film resistive variable memory through spontaneous oxidation in the evaporation process, the preparation process is simple and easy, and the device performance is superior. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108321294-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111628075-B
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110950372-A
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111628075-A |
| priorityDate |
2018-02-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |