http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108321121-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823857 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 |
| filingDate | 2017-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108321121-B |
| titleOfInvention | Method for manufacturing back gate type semiconductor device |
| abstract | The invention provides a manufacturing method of a back gate type semiconductor device, which is characterized in that after first annealing for eliminating defects of a high-K gate dielectric layer, firstly, an oxygen-rich material layer and an oxygen-absorbing material layer are sequentially formed on the surface of the high-K gate dielectric layer, and second annealing is carried out, wherein in the second annealing process, part of oxygen in the oxygen-rich material layer is diffused into the high-K gate dielectric layer, so that the oxygen vacancy defects in the high-K gate dielectric layer are reduced, the performance of the high-K gate dielectric layer is ensured, the oxygen-absorbing material layer can absorb the oxygen in the oxygen-rich material layer, and excessive oxygen is prevented from diffusing into the high-K gate dielectric layer and an interlayer dielectric layer to thicken the interlayer dielectric layer and influence the device performance; and secondly, carrying out third annealing after removing the oxygen absorption material layer and the oxygen-enriched material layer to reactivate the activity of the source drain region ions, reduce the resistance of the source drain region and improve the performance of the transistor. |
| priorityDate | 2017-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 76.