http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108305923-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_242cc8d15c771395b920cc7de452da6a |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2924-12041 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-605 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B9-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B28-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B19-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B19-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-28 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-40 |
| filingDate | 2015-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_685d8d09dd9fdf68f0fe6b4de39191b3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_61a4421a05cbfcdc2237edd45f8a8e0a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94519bd05d589ab7650ba94fb4d1fb91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7e2b88a208e9ad28fd00477f5078392 |
| publicationDate | 2018-07-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108305923-A |
| titleOfInvention | Polycrystalline gallium nitride self-supporting substrate and light emitting device using the polycrystalline gallium nitride self-supporting substrate |
| abstract | The present invention provides a polycrystalline gallium nitride self-supporting substrate and a light-emitting device using the polycrystalline gallium nitride self-supporting substrate, which are composed of a plurality of gallium nitride-based single crystal particles oriented along a specific crystal orientation in a substantially normal direction. The crystal orientation of each gallium nitride-based single crystal particle measured by inverse pole figure imaging of the substrate surface of the self-supporting substrate by electron backscatter diffraction (EBSD) is distributed at various angles with respect to a specific crystal orientation, which The average inclination angle is 1-10°. In addition, the light-emitting element of the present invention includes the self-supporting substrate and a light-emitting functional layer formed on the substrate, the light-emitting functional layer having one or more semiconductor single-crystal particles having a single-crystal structure in a substantially normal direction. Floor. According to the present invention, a polycrystalline gallium nitride self-supporting substrate capable of reducing the defect density on the substrate surface can be provided. In addition, the use of the polycrystalline gallium nitride self-supporting substrate of the present invention can also provide a light-emitting device capable of obtaining high luminous efficiency. |
| priorityDate | 2014-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
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