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filingDate 2016-11-24-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d19757a5ef64f301f4aa1b08fa9779d8
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f1328ad301f5e429b00bf5cdbfc7d1ea
publicationDate 2018-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-108291301-A
titleOfInvention Method for Metal-Organic Vapor Phase Deposition Using Hydrocarbon Solutions of Alkyl-Indium Compounds
abstract The present invention relates to a method for the preparation of indium-containing layers by metal-organic vapor deposition, wherein the indium-containing layers are grown on a substrate in a reaction chamber, wherein the indium is delivered in the form of an indium-containing precursor compound having the formula InR to a process wherein the groups R are independently selected from alkyl groups having 1 to 6 C atoms, characterized in that the delivery of the indium-containing precursor compound takes place in the form of a solution comprising a solvent and dissolved therein An indium-containing precursor compound wherein the solvent has at least one hydrocarbon having 1 to 8 carbon atoms. The invention also relates to a solution consisting of compounds of the formula InR 3 , wherein R are independently selected from alkyl groups having 1 to 6 C atoms, and at least one compound having 1 to 8 C atoms Atomic hydrocarbons, use of the solution for producing indium-containing layers by metal-organic vapor deposition, and devices for carrying out the method.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110983300-A
priorityDate 2015-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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