http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108257953-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-8613 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-407 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0727 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42312 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-861 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0688 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7398 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41708 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0629 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66348 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0635 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-404 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-739 |
| filingDate | 2017-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-04-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108257953-B |
| titleOfInvention | Semiconductor device with IGBT region and non-switchable diode region |
| abstract | The semiconductor device comprises: a semiconductor substrate comprising a front side, a back side, a drift layer and a body layer between the front side and the drift layer and forming a pn junction with the drift layer, a front metallization is arranged on the front side and with the body layer ohmic connection, the rear metallization is arranged on the rear side and is ohmically connected to the drift layer; and at least one IGBT cell region and at least one freewheeling diode region adjacent thereto. The IGBT cell region includes a gate electrode ohmically connected to the gate metallization and electrically insulated from the semiconductor substrate. The freewheeling diode region includes a field electrode ohmically connected to the front metallization and spaced from the semiconductor substrate and the gate electrode. The gate electrode is arranged in the first trench through the body layer when viewed from the first vertical section. The field electrodes are arranged in second trenches through the body layer when seen from the second vertical section. When viewed in an orthogonal projection on a horizontal plane parallel to the front side, the field electrodes are in the shape of a second strip, and the gate electrodes are in the shape of a first strip in a virtual extension of the second strip. |
| priorityDate | 2016-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.