http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108242468-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823892 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-086 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-761 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1083 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0415 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66681 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0922 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2017-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108242468-B |
| titleOfInvention | Semiconductor device and method of manufacturing the same |
| abstract | The present invention provides a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate having a first conductivity type. The epitaxial layer is arranged on the substrate and has the second conductivity type. The first buried layer of the second conductivity type is disposed in the high potential region of the substrate, and the first buried layer of the second conductivity type has the second conductivity type. The second buried layer of the second conductivity type is located just above the first buried layer of the second conductivity type, and the second buried layer of the second conductivity type has the second conductivity type. The top surface of the first buried layer of the second conductivity type and the top surface of the second buried layer of the second conductivity type are respectively separated from the top surface of the epitaxial layer by different distances. The dopant concentration of the first buried layer of the second conductivity type is smaller than the dopant concentration of the second buried layer of the second conductivity type. |
| priorityDate | 2016-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID23969 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419548998 |
Total number of triples: 24.