http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108233175-B
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-22 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34373 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-34 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-22 |
filingDate | 2018-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2019-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2019-09-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-108233175-B |
titleOfInvention | A kind of production method for burying AlGaInAs Distributed Feedback Laser |
abstract | The present invention relates to photoelectron technical fields, provide a kind of production method for burying AlGaInAs Distributed Feedback Laser, including eight steps of S1~S8.A kind of production method of burial AlGaInAs Distributed Feedback Laser of the invention, the method combined by using non-selective wet corrosion and selective wet etching, without using High temperature ion etching apparatus, manufacture craft is simple, cost is relatively low, High temperature ion etching bring damage is avoided simultaneously, guarantee the not damaged defect of active layer AlGaInAs, reduce the risk of AlGaInAs oxidation, simultaneously current barrier layer growth before by high-temperature heat treatment elimination the side AlGaInAs to thin oxide layer, guarantee the growth quality on subsequent current barrier layer, to realize the AlGaInAs Distributed Feedback Laser of high reliability. |
priorityDate | 2018-01-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.