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filingDate 2018-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_44130a351dccee117d906b470558b933
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publicationDate 2018-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-108232038-A
titleOfInvention A light-emitting diode based on perovskite thin film and its preparation method
abstract The invention discloses a light-emitting diode based on a perovskite thin film and a preparation method thereof. The light-emitting diode comprises a substrate, an anode layer, a hole transport layer, a light-emitting layer, an electron transport layer and a cathode layer in order from bottom to top. The light-emitting layer is made of organic and inorganic hybrid ABX 3 -type cubic crystal structure light-emitting materials, where A is an organic amine group, B is the fourth main group metal, and X is a combination of a single halogen element or a multi-element halogen element , in the preparation process of the light-emitting layer, the perovskite film is formed on the substrate by using the dual-source mixed evaporation perovskite precursor material, the substrate is in contact with the cooling backplane, and the substrate is kept at a low temperature during the evaporation process, and the precursor material molecules It can be rapidly crystallized on a low-temperature substrate, and the formed perovskite film has low grain roughness, good crystallinity, and small grains. This method improves the brightness and quantum efficiency of the light-emitting diode, and solves the problems of large performance deviation and weak brightness of the perovskite light-emitting diode.
isCitedBy http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111916572-A
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priorityDate 2018-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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