| abstract |
The application discloses a quantum dot light-emitting diode with an inverted structure and a preparation method thereof, comprising a substrate, a cathode, an electron transport layer, a quantum dot light-emitting layer, a hole transport layer and an anode sequentially stacked, and the electron transport layer is a sol- The metal oxide thin film prepared by gel method, the upper surface of the electron transport layer has an interface modification layer. The QLED is an inverted structure device, which can be integrated with a mature n-channel a-Si-based TFT drive circuit, and can realize bottom-emitting, top-emitting, and top-bottom emitting transparent devices by selecting a transparent cathode or anode. An inverted structure quantum dot light-emitting diode and its preparation method described in this application introduce an electron transport layer modification layer, which can effectively reduce the work function of the cathode, improve the morphology of the electron transport layer, and reduce the impact of the electron transport layer on the quantum dot light-emitting layer. Impact. The efficiency of an inverted quantum dot light-emitting diode described in this application has been significantly improved, and its efficiency is far ahead of other inverted quantum dot devices. |