http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108232002-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N50-10 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L43-08 |
| filingDate | 2016-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108232002-B |
| titleOfInvention | A method of fabricating magnetic tunnel junction arrays |
| abstract | The invention discloses a method for preparing a magnetic tunnel junction array, which relates to the technical field of magnetic random access memory manufacturing. The magnetic tunnel junction is etched by using a gas with carbonyl or hydroxyl functional groups as an ion source. The layer and the magnetic tunnel junction material have a relatively high selectivity ratio, which reduces the loss of the mask during the etching process, and the redeposition of the mask material and the redeposition of the magnetic tunnel junction material due to physical sputtering are beneficial. Preventing the formation of conductive channels in the memory layer and the reference layer has a significant effect on improving the magnetic/electrical performance and yield of the magnetic random access memory. At the same time, the ion beam has good directional properties, increases the anisotropic etching performance, and is beneficial to the miniaturization of magnetic random access memory devices. |
| priorityDate | 2016-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.