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filingDate 2017-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2022-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2022-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-108231662-B
titleOfInvention Method and Conductive Structure for Forming Replacement Contacts
abstract The present disclosure describes a method of forming replacement contacts. For example, a replacement contact may include metal having one or more first sidewall surfaces and a top surface. A first dielectric is formed, wherein the first dielectric is one or more first sidewall surfaces adjacent to the metal. A second dielectric is formed on top surfaces of the first dielectric and metal. An opening is formed in the second dielectric. A metal oxide structure can be selectively grown on the top surface of the metal, wherein the metal oxide structure has one or more second sidewall surfaces. One or more spacers are formed, wherein the spacers are adjacent to one or more second sidewall surfaces of the metal oxide structure. Furthermore, the metal oxide structure is removed.
priorityDate 2016-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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