http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108195891-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-125 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-12 |
| filingDate | 2017-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108195891-B |
| titleOfInvention | Semiconductor sensor and quantitative detection method of mustard gas or mustard gas simulator gas |
| abstract | The invention provides a semiconductor sensor which comprises a sensitive material layer, wherein the sensitive material layer comprises tungsten trioxide, and the semiconductor sensor is used for quantitatively detecting mustard gas or mustard gas simulator gas. The invention also provides a quantitative detection method of the mustard gas or the mustard gas simulator gas, which comprises the steps of providing any one of the semiconductor sensors; exposing a sensitive material layer of the semiconductor sensor to a detected mustard gas or mustard gas simulator gas atmosphere, heating the semiconductor sensor, and acquiring a first response value of the semiconductor sensor in the detected mustard gas or mustard gas simulator gas atmosphere; and calculating the concentration of the detected mustard gas or mustard gas simulant gas according to the acquired first response value. |
| priorityDate | 2017-11-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.