| abstract |
The present invention relates to a method and chamber components. A multi-component coating composition for a surface of a semiconductor process chamber component comprising at least one first of yttrium oxide or yttrium fluoride applied to the surface of the semiconductor process chamber component using an atomic layer deposition process A film layer and at least one second film layer of additional oxide or additional fluoride applied to the surface of the semiconductor process chamber component using an atomic layer deposition process, wherein the multi-component coating composition is selected from YO x The group consisting of Fy , YAlxOy , YZrxOy , and YZrxAlyOz . |