| abstract |
The invention relates to a thin film transistor and a preparation method thereof. The thin film transistor includes: a substrate; a gate, which is arranged on a surface of the substrate; a dielectric layer, which covers the gate; a sub-dielectric layer and a second sub-dielectric layer; a semiconductor layer, the semiconductor layer is disposed on the surface of the dielectric layer away from the substrate, and the semiconductor layer includes a plurality of nano-semiconductor materials; a source electrode and a drain electrode , the source electrode and the drain electrode are arranged at intervals and are respectively electrically connected to the semiconductor layer; wherein, the first sub-dielectric layer is an anomalous hysteresis material layer and is in direct contact with the gate electrode; the second sub-dielectric layer The layer is a normal hysteresis material layer and is disposed between the first sub-dielectric layer and the semiconductor layer. The hysteresis curve of the thin film transistor of the present invention is obviously reduced or even eliminated. |