http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108172503-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02491 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02422 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02667 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78672 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02686 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2017-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-03-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108172503-B |
| titleOfInvention | Method for preparing polysilicon thin film by laser crystallization, product and thin film transistor obtained therefrom |
| abstract | The present invention relates to the technical field of TFT thin film transistors, in particular to a method for preparing a polysilicon thin film by laser crystallization, and the obtained products and thin film transistors. The preparation steps are: S1, forming a thermistor layer on a glass substrate; S2, forming an amorphous silicon layer on the thermistor layer; S3, irradiating the amorphous silicon film layer of the crystallization step S2 with a laser pulse, and simultaneously using an electrical The method of heating or electromagnetic heating heats the thermistor layer to convert the amorphous silicon layer into a polysilicon layer. Before the step S1, it also includes a process of forming an isolation layer on the glass substrate, and the isolation layer is one or both of silicon oxide and silicon nitride. The polycrystalline silicon film obtained by the invention has the characteristics of good grain uniformity, good grain density consistency, good grain mobility and good stability. The thin film transistor obtained by the invention has the characteristics of no spots, uniform brightness and good electrical performance. |
| priorityDate | 2017-12-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.