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filingDate 2018-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2021-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2021-10-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-108163820-B
titleOfInvention Method for preparing tin diselenide nanowire at low temperature
abstract The invention discloses a method for preparing tin diselenide nanowire at low temperature, belonging to the technical field of inorganic compound semiconductor nano materials; the tin diselenide nanowire material synthesized by adopting the solvothermal method only needs to adopt cheap and simple raw materials at the lower temperature of 100-120 ℃: inorganic salt, ethanol, hydrazine hydrate and ammonia water are synthesized in one step; the method is simple to operate, less in controllable parameters in the synthesis process and low in synthesis cost; the prepared tin diselenide nanowire material grows in a solution in a freely dispersed manner, has one-dimensional current state appearance and is well crystallized; no surfactant or template agent is introduced in the synthesis process, the process is pollution-free, the surface of the nanowire is clean, the nanowire is suitable for physical property research, and meanwhile, the surface modification is easy to carry out.
priorityDate 2018-03-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 34.