| abstract |
The semiconductor device has a semiconductor substrate (SB) and a wiring structure formed on the main surface of the semiconductor substrate (SB). The uppermost first wiring layer among the plurality of wiring layers included in the wiring structure includes a pad (PD), and the pad (PD) has a first region for bonding copper wires and a first region for contacting probes. 2 areas. Among the plurality of wiring layers included in the wiring structure, the second wiring layer, which is one layer lower than the first wiring layer, includes a wiring (M6) arranged directly under the pad (PD), and the wiring (M6) is arranged on the pad ( Directly below the area other than the first area of the PD), and directly below the first area of the pad (PD), a conductor pattern on the same layer as the wiring (M6) is not formed. |