| abstract |
A semiconductor device has a semiconductor substrate (SB) and a wiring structure formed on a main surface of the semiconductor substrate (SB). The uppermost first wiring layer among the plurality of wiring layers included in the wiring structure includes a pad (PD), and the pad (PD) has a first region for bonding a copper wire and a first region for contacting a probe. 2 areas. Among the plurality of wiring layers included in the wiring structure, the second wiring layer one layer lower than the first wiring layer includes a wiring (M6) arranged directly under the pad (PD), and the wiring (M6) is arranged on the pad (PD). Immediately below the region other than the first region of PD) and directly below the first region of the pad (PD), no conductor pattern on the same layer as the wiring (M6) is formed. |