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filingDate 2016-09-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_88b9f0344bd993ac28bca86192eea61a
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publicationDate 2018-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-108139519-A
titleOfInvention Low-contrast silicon nitride-based metasurfaces
abstract Disclosed herein are metasurfaces formed on a substrate from a plurality of pillars. The metasurface is configured to be optically active at one or more wavelengths and, in certain embodiments, is configured to form a lens with unexpectedly strong focusing power. In particular, metasurfaces are formed from "low contrast" materials, including CMOS compatible materials such as silicon dioxide or silicon nitride. Thus, the disclosed metasurfaces are generally CMOS compatible and thus represent a new paradigm in metasurface design and fabrication.
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Total number of triples: 38.