Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B9-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F01D5-005 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B3-106 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23G1-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/F05D2230-90 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B9-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D7-261 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23G3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02068 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23G5-032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B08B7-0035 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C11D17-0039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23G5-04 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23G5-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23G3-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D7-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C11D17-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23G5-032 |
filingDate |
2016-09-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2021-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2021-08-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-108138336-B |
titleOfInvention |
Method for precleaning conductive interconnect structures |
abstract |
Methods for processing a substrate are provided herein. In some embodiments, a method of processing a substrate includes: heating a substrate disposed within a processing volume of a substrate processing chamber to a temperature of about 400 degrees celsius, wherein the substrate includes an exposed conductive material; and exposing the substrate to a process gas to reduce the contaminated surface of the conductive material, the process gas comprising about 80 wt.% to about 100 wt.% of an alcohol vapor. In some embodiments, the substrate further includes a first surface having an opening formed therein, wherein the exposed conductive material is a portion of the conductive material disposed in the substrate and aligned with the opening such that a portion of the conductive material disposed in the substrate is exposed through the opening. |
priorityDate |
2015-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |