| abstract |
The embodiment of the present disclosure provides semiconductor device structure.Semiconductor device structure includes dielectric layer.Semiconductor device structure is also comprising gate stack structure in dielectric layer.Semiconductor device structure further includes semiconductor line, and the semiconductor line of gate stack structure surrounding portion.In addition, semiconductor device structure includes contact electrode in dielectric layer, and contact electrode is electrically connected to semiconductor line.Contact electrode extends in the opposite direction with gate stack structure from semiconductor line. |