| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36333273e27f0db23ddddbf80ba79ba7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-091
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-096
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0237 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-0023
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-10
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-03
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L24-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C99-005 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-488
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-48
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-60 |
| filingDate |
2017-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8b2eee3ddef2bf9816e15f47ec7865df
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_890251dbe0dfb9eb9f6bbc73c5e2a04c
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e7394b999e5d940889147572465e2448
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5ec12169c95c4f1f7959e26b601c418f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_da8e5f7279951e796b974189caeaa8a3
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8c4cd88b31c38c1eda4874a86eb1aa8f |
| publicationDate |
2018-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-108122872-A |
| titleOfInvention |
Semiconductor structure and its manufacturing method |
| abstract |
This announcement provides a kind of semiconductor structure and its manufacturing method, the semiconductor structure include：Sensing element is configured to from sensing target received signal；Molded, around the sensing element；Through-out pathway is located in the molded；Front side redistribution layer is positioned at the front side of the sensing element and is electrically connected to the front side；And rear side redistribution layer, it is positioned at the rear side of the sensing element, the front side redistribution layer and the rear side redistribution layer are electrically connected by the through-out pathway.This announcement also provides a kind of method for manufacturing the semiconductor structure set forth herein. |
| priorityDate |
2016-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |