Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0669 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78651 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66484 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823456 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66537 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823412 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
filingDate |
2017-10-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2020-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2020-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-108122774-B |
titleOfInvention |
Semiconductor structure and method of forming a semiconductor device |
abstract |
The semiconductor structure includes a plurality of first semiconductor layers interleaved with a plurality of second semiconductor layers. The first semiconductor layer and the second semiconductor layer have different material compositions. A dummy gate stack is formed over the uppermost first semiconductor layer. A first etching process is performed to remove portions of the second semiconductor layer that are not disposed under the dummy gate stack, thereby forming a plurality of voids. The first etching process has an etching selectivity between the first semiconductor layer and the second semiconductor layer. Thereafter, a second etching process is performed to enlarge the void. Embodiments of the present invention also relate to threshold voltage adjustment for a gate all around semiconductor structure. |
priorityDate |
2016-11-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |