http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108084409-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-91 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-3243 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-146 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-124 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-3222 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G61-125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G61-126 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07D519-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G61-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-113 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G61-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-46 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07D519-00 |
| filingDate | 2017-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-03-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108084409-B |
| titleOfInvention | A kind of wide band gap organic semiconductor material and its preparation method and application |
| abstract | The invention discloses a wide-bandgap organic semiconductor material and a preparation method and application thereof. The structural formula of the material is as formula I, wherein R 1 , R 2 and R 3 are hydrogen or an alkyl group with 1-30 carbon atoms, or is an alkyl group with 1-30 carbon atoms in which one or more carbon atoms are replaced by halogen atoms, oxygen atoms, alkenyl, alkynyl, aryl, hydroxyl, amino, carbonyl, carboxyl, ester, cyano or nitro groups The group formed by substitution; the π unit is one of benzene, naphthalene, thiophene, thiophene, selenophene, telluride, furan, pyrrole, pyridine, silole, thiazole, oxazole, triazole and their derivatives; n is the degree of polymerization of the semiconductor material, and n is a natural number from 1 to 10,000. The material exhibits excellent device performance in organic solar cells, has a wide band gap, a deep HOMO energy level, and can be well matched with non-fullerene acceptors. The material is used to prepare the active layer of organic solar cells. , high energy conversion efficiencies were obtained in non-fullerene solar cell devices. |
| priorityDate | 2017-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 87.