http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108039350-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_81ca9a5f1da06521982d5a6b55b04244 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-48 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11531 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11521 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11543 |
| filingDate | 2017-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_633d6af9028326b33ff1c10dfa044559 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ecf49cbda3b520d6a95503f612f9ffa2 |
| publicationDate | 2018-05-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108039350-A |
| titleOfInvention | Process-integrated approach to improve gate oxide reliability of high-voltage devices in flash memory |
| abstract | The invention discloses a process integration method for improving the reliability of a gate oxide layer of a high-voltage device in a flash memory, comprising steps: step 1, providing a semiconductor substrate and forming field oxygen; step 2, forming a liner oxide layer; step 3, Carry out the ion implantation of the well region of the high-voltage device; step 4, carry out the threshold voltage adjustment ion implantation of each flash memory unit; step 5, remove the liner oxide layer of the flash memory unit area and the high-voltage device area at the same time; Form the required tunnel oxide layer of the flash memory cell on the surface of the semiconductor substrate of the high-voltage device area; step seven, form the first layer of polysilicon and ONO layer; step eight, etch the floating gate required for the gate structure of the flash memory cell Polysilicon layer and ONO layer. The invention can reduce the damage of the gate oxide layer of the high-voltage device, improve the reliability of the gate oxide layer of the high-voltage device, and further improve the reliability of the high-voltage device. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-116053274-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113013169-A |
| priorityDate | 2017-11-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.