http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108022838-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28123 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40114 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30621 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3213 |
| filingDate | 2017-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-01-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-108022838-B |
| titleOfInvention | Plasma etching method |
| abstract | An object of the present invention is to provide a plasma etching method capable of etching a film containing a tungsten element with a high selectivity ratio to a SiN film and with a high yield in a plasma etching method for etching a film containing a tungsten element with a fine pattern. The present invention is characterized in that in a plasma etching method for etching a film containing a tungsten element by using plasma, the film containing the tungsten element is etched by using a gas containing a silicon element, a gas containing a halogen element, and a gas containing a carbon element and an oxygen element. |
| priorityDate | 2016-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.