http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108003273-B

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filingDate 2017-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-108003273-B
titleOfInvention PH response type polymer, preparation method thereof and photoresist composition
abstract The invention provides a pH response type polymer, a preparation method thereof and a photoresist composition. The photoresist composition comprises the following components in percentage by weight: 1-10% of pH response type polymer with a structure shown in formula I or formula II, 5-30% of resin, 0.1-1% of photosensitizer and the balance of solvent, wherein m is an integer of 20-100, n is an integer of 20-100, x is an integer of 1-4, R 1 Is a methyl group or a hydrogen atom, R 2 Is methyl or hydrogen atom, and R is methyl or hydrogen atom. The photoresist composition has the characteristic of volume shrinkage under an acidic condition, can prevent undercut phenomenon in the etching process of films such as a grid electrode, a source electrode, a drain electrode, a metal oxide pixel electrode, a metal oxide active layer and the like, and reduces the incidence rate of short circuit type defects, thereby improving the product yield.
priorityDate 2017-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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