Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-462 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-267 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66227 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7391 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66356 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66772 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
filingDate |
2017-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2020-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2020-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-107994078-B |
titleOfInvention |
Field effect transistor with source control electrode, method of manufacture and electronic device |
abstract |
Provided are a field effect transistor, a method of manufacturing the field effect transistor, and an electronic device. The field effect transistor includes: a source electrode and a drain electrode, the source electrode is formed of Dirac material; a channel, the channel is arranged between the source electrode and the drain electrode; and a source control electrode, which is arranged on the source electrode and used for doping of the Dirac material is controlled so that the Dirac material is doped opposite to the channel; and a gate disposed over the channel and electrically insulated from the channel. |
priorityDate |
2017-12-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |