http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107924803-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-3343 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J2237-334 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32935 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32963 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate | 2016-08-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-12-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107924803-B |
| titleOfInvention | Single wafer real-time etch rate and uniformity predictor for plasma etch process |
| abstract | The present invention relates to semiconductor manufacturing, and more particularly to a real-time method for qualifying the etch rate of a plasma etch process. A method for testing a semiconductor plasma etch chamber may include: depositing a film on a substrate of a wafer, the wafer including a central region and an edge region; pattern of area isolation depositing photoresist on top of the film; and performing an etching process comprising at least three process steps on the wafer. The three process steps may include: etching the film in any areas not covered by photoresist until a first clear endpoint signal is achieved; performing an in-situ ashing to remove any photoresist; and etching the film in any regions exposed by the removal of the photoresist until a second clear endpoint is achieved. The method may further comprise determining whether both endpoints are achieved within respective previously set tolerances, and if both endpoints are achieved within the previously set tolerances, certifying the plasma etch chamber as validated . |
| priorityDate | 2015-08-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID24261 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID457707758 |
Total number of triples: 20.