Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32051 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C07F15-0046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D5-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28556 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28194 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D1-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45553 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C07F15-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-16 |
filingDate |
2016-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2020-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2020-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-107923038-B |
titleOfInvention |
Raw material for chemical vapor deposition composed of binuclear ruthenium complex and chemical vapor deposition method using the same |
abstract |
The present invention relates to a raw material for chemical vapor deposition composed of a binuclear ruthenium complex for producing a ruthenium thin film or a ruthenium compound thin film by a chemical vapor deposition method, wherein the binuclear ruthenium complex is represented by the following formula (1), wherein It is formed by coordinating two rutheniums that are metal-bonded by a carbonyl group and a nitrogen-containing organic ligand (L). The raw material according to the present invention can produce a high-purity ruthenium thin film with a low melting point and moderate thermal stability. Therefore, it is suitable to be applied to electrodes and the like of various devices. |
priorityDate |
2015-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |