| abstract |
A semiconductor device and a method of manufacturing a semiconductor device, the device comprising: a gate structure on a substrate; source/drain layers respectively on portions of the substrate adjacent to the gate structure; contacting the source/drain respectively A first contact plug on the upper surface of the pole layer; a second contact plug contacting one of the gate structures, the sidewall of the second contact plug is covered by an insulating spacer; and commonly contacting at least one of the gate structures An upper surface of one of the first contact plugs and at least one third contact plug, at least a portion of a sidewall of the third contact plug is not covered by the insulating spacer. |