http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107919264-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76808 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76807 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32174 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31056 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate | 2017-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107919264-B |
| titleOfInvention | Method for Selectively Etching Silicon Oxide Related to Organic Masks |
| abstract | The present invention provides a method for selectively etching silicon oxide in relation to an organic mask, in particular a method for selectively etching trenches in a silicon oxide-containing layer using an organic planarization layer with via plugs Methods. Processing the silicon oxide layer includes a plurality of process cycles, wherein each etch cycle includes a deposition stage and an etch stage, the deposition stage including providing a flow of a deposition stage gas including a fluorocarbon or hydrofluorocarbon-containing gas having a fluorocarbon ratio , providing a constant RF power that plasmas the deposition stage gas, and stops the deposition stage, the etch stage including providing a fluorocarbon-containing compound or hydrofluoride comprising a fluorocarbon ratio higher than the fluorocarbon ratio of the deposition stage gas The flow of the etch stage gas of the carbon compound gas provides the pulsed RF power which forms the etch stage gas into a plasma and stops the etch stage. |
| priorityDate | 2016-10-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.