http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107895682-A

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filingDate 2017-09-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_76b09d00efe2d341d03dd39238df37c6
publicationDate 2018-04-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-107895682-A
titleOfInvention chamber with flow source
abstract The present application discloses a chamber with a flow-through source. The described processing chamber may include a chamber enclosure at least partially defining an interior region of the semiconductor processing chamber. The chamber can include a showerhead positioned within the chamber housing, and the showerhead can at least partially divide the interior region into a remote region and a processing region, which can contain the substrate. The chamber may also include an inductively coupled plasma source positioned between the showerhead and the processing region. An inductively coupled plasma source may include a conductive material within a dielectric material.
priorityDate 2016-10-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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