http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107879381-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01P2004-03 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G53-04 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G53-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N27-00 |
| filingDate | 2017-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-08-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107879381-B |
| titleOfInvention | Preparation method of the monatomic modification NiO nano material of Sn for formaldehyde sensor and products thereof and application |
| abstract | The invention discloses preparation method of the monatomic modification NiO nano material of a kind of Sn for formaldehyde sensor and products thereof and applications, this method synthesizes NiO nano material using hydro-thermal method, then in organic solvent, anhydrous SnCl4 is adsorbed on NiO nano-material surface, to prevent SnCl4 from hydrolyzing, 1 ~ 2 drop nitric acid is added in organic solvent, it is premixed in zero degree and NiO powder, then solution is placed in -18 DEG C, pass through Cold pretreatment, it can make to possess a large amount of vacancy in system, then in 450 ~ 550 DEG C of high-temperature roastings, obtain the NiO nano material of the monatomic modification of Sn.The advantages of this method is that preparation process is simple, and preparation cost is low, and performance is stablized, and can greatly promote the gas sensitivity of p-type semiconductor, have broad application prospects. |
| priorityDate | 2017-11-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 41.